Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have been widely applied in high-power and high-frequency applications, like high-speed wireless communications, power switching devices, and power amplifiers.
How sputtering could drive the adoption of high-performance ScAlN-based transistors
